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Infineon | IPB025N08N3GATMA1

Manufacturer Part #

IPB025N08N3GATMA1

Single N-Channel 80 V 2.5 mOhm 155 nC OptiMOS™ Power Mosfet - D2PAK

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2309
Product Specification Section
Infineon IPB025N08N3GATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 80V
Drain-Source On Resistance-Max: 2.5mΩ
Rated Power Dissipation: 300|W
Qg Gate Charge: 155nC
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
15 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$2,240.00
USD
Quantity
Unit Price
1,000
$2.24
2,000
$2.22
3,000+
$2.21
Product Variant Information section