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Infineon | IPB037N06N3GATMA1

Manufacturer Part #

IPB037N06N3GATMA1

Single N-Channel 60 V 3.7 mOhm 98 nC OptiMOS™ Power Mosfet - D2PAK

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPB037N06N3GATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 3.7mΩ
Rated Power Dissipation: 188|W
Qg Gate Charge: 98nC
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
12 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$870.00
USD
Quantity
Unit Price
1,000
$0.87
2,000
$0.86
3,000
$0.855
4,000
$0.85
5,000+
$0.835
Product Variant Information section