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Infineon | IPB120N04S402ATMA1

Manufacturer Part #

IPB120N04S402ATMA1

Single N-Channel 40 V 1.8 mOhm 134 nC OptiMOS™ Power Mosfet - PG-TO263-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPB120N04S402ATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 40V
Drain-Source On Resistance-Max: 1.8mΩ
Rated Power Dissipation: 158W
Qg Gate Charge: 103nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 120A
Turn-on Delay Time: 27ns
Turn-off Delay Time: 30ns
Rise Time: 16ns
Fall Time: 30ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 3V
Technology: OptiMOS
Input Capacitance: 8260pF
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
9 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$1,220.00
USD
Quantity
Unit Price
1,000
$1.22
2,000
$1.21
5,000+
$1.19
Product Variant Information section