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Manufacturer Part #
IPB120N04S402ATMA1
Single N-Channel 40 V 1.8 mOhm 134 nC OptiMOS™ Power Mosfet - PG-TO263-3
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:1000 per Package Style:TO-263-3 (D2PAK) Mounting Method:Surface Mount | ||||||||||
| Date Code: | 1711 | ||||||||||
Product Specification Section
Infineon IPB120N04S402ATMA1 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
File
Date
Location/Material change
02/09/2024 Details and Download
Part Status:
Active
Active
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Infineon IPB120N04S402ATMA1 - Technical Attributes
Attributes Table
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 40V |
| Drain-Source On Resistance-Max: | 1.8mΩ |
| Rated Power Dissipation: | 158W |
| Qg Gate Charge: | 103nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 120A |
| Turn-on Delay Time: | 27ns |
| Turn-off Delay Time: | 30ns |
| Rise Time: | 16ns |
| Fall Time: | 30ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 3V |
| Technology: | OptiMOS |
| Input Capacitance: | 8260pF |
| Package Style: | TO-263-3 (D2PAK) |
| Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
35
USA:
35
Product Variant Information section
Available Packaging
Package Qty:
1000 per
Package Style:
TO-263-3 (D2PAK)
Mounting Method:
Surface Mount