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Manufacturer Part #
IPB50N10S3L16ATMA1
N-Channel 100 V 70 A 15.4 mOhm Surface Mount Mosfet - PG-TO263-3-2
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: |
Product Variant Information section
Available PackagingPackage Qty:1000 per Reel Package Style:TO-263-3 (D2PAK) Mounting Method:Surface Mount |
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Infineon IPB50N10S3L16ATMA1 - Product Specification
Shipping Information:
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PCN Information:
Subject: Several changes affecting products IPBxxS3-xx, IPPxxS3-xx, IPDxxS3-xx, IPBxxS3L-xx, IPPxxS3L-xx and IPDxxS3L-xxReason/Motivation: Due to continuously raising demand for Infineon automotive products exceeding the capacity in wafer fab Regensburg, we have extended our FE capacity for products IPBxxS3-xx, IPPxxS3-xx, IPDxxS3-xx and IPBxxS3L-xx, IPPxxS3L-xx, IPDxxS3L-xx Ensure delivery capability by establishing same SFET3 technology at well known Infineon FE fab Kulim.Expansion of wafer test to increase testing capacity.
Part Status:
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Infineon IPB50N10S3L16ATMA1 - Technical Attributes
| Product Status: | Active |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 100V |
| Drain-Source On Resistance-Max: | 15.4mΩ |
| Rated Power Dissipation: | 100W |
| Qg Gate Charge: | 49nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 50A |
| Turn-on Delay Time: | 10ns |
| Turn-off Delay Time: | 28ns |
| Rise Time: | 5ns |
| Fall Time: | 5ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 1.7V |
| Technology: | OptiMOS |
| Input Capacitance: | 3215pF |
| Series: | OptiMOS-T |
| Package Style: | TO-263-3 (D2PAK) |
| Mounting Method: | Surface Mount |
Available Packaging
Package Qty:
1000 per Reel
Package Style:
TO-263-3 (D2PAK)
Mounting Method:
Surface Mount