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Infineon | IPD053N06NATMA1

Manufacturer Part #

IPD053N06NATMA1

Single N-Channel 60 V 5.3 mOhm 27 nC OptiMOS™ Power Mosfet - TO-252-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPD053N06NATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 5.3mΩ
Rated Power Dissipation: 3W
Qg Gate Charge: 27nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 45A
Turn-on Delay Time: 12ns
Turn-off Delay Time: 20ns
Rise Time: 12ns
Fall Time: 7ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 2.8V
Technology: OptiMOS
Input Capacitance: 2000pF
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
13 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$1,525.00
USD
Quantity
Unit Price
2,500
$0.61
5,000
$0.60
7,500
$0.595
12,500+
$0.585
Product Variant Information section