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Manufacturer Part #

IPD50N04S308ATMA1

Single N-Channel 40 V 7.5 mOhm 27 nC OptiMOS™ Power Mosfet - TO-252-3-11

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPD50N04S308ATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 40V
Drain-Source On Resistance-Max: 7.5mΩ
Rated Power Dissipation: 68|W
Qg Gate Charge: 27nC
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
9 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$1,762.50
USD
Quantity
Unit Price
2,500
$0.705
5,000
$0.70
7,500
$0.69
10,000+
$0.685
Product Variant Information section