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Manufacturer Part #
IRFP7537PBF
Single N-Channel 60 V 3.3 mOhm 210 nC HEXFET® Power Mosfet - TO-247-3
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: |
Product Variant Information section
Available PackagingPackage Qty:25 per Tube Package Style:TO-247-3 Mounting Method:Through Hole |
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Infineon IRFP7537PBF - Product Specification
Shipping Information:
HTS Code:
ECCN:
PCN Information:
Detailed change information:Subject Phase out of Kyocera KEG300 mold compound for several assembly locations and change of lead finish from tin dip to electroplating at Tijuana, Mexico for dedicated TO220-3 & TO247-3 products.Reason:To ensure continuity of mold compound supply due to Kyocera KEG300 end of life and to further ensure our product performance with lead-free electroplating finish
Part Status:
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Infineon IRFP7537PBF - Technical Attributes
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 60V |
| Drain-Source On Resistance-Max: | 3.3mΩ |
| Rated Power Dissipation: | 230W |
| Qg Gate Charge: | 210nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 172A |
| Turn-on Delay Time: | 15ns |
| Turn-off Delay Time: | 82ns |
| Rise Time: | 105ns |
| Fall Time: | 84ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 3.7V |
| Technology: | Si |
| Height - Max: | 20.7mm |
| Length: | 15.87mm |
| Input Capacitance: | 7020pF |
| Package Style: | TO-247-3 |
| Mounting Method: | Through Hole |
Available Packaging
Package Qty:
25 per Tube
Package Style:
TO-247-3
Mounting Method:
Through Hole