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Manufacturer Part #
IRFU9110PBF
Single P-Channel 100 V 1.2 Ohms Through Hole Power Mosfet - IPAK (TO-251)
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| Mfr. Name: | Vishay | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:75 per Tube Package Style:TO-251 (IPAK) Mounting Method:Through Hole | ||||||||||
| Date Code: | 2223 | ||||||||||
Vishay IRFU9110PBF - Product Specification
Shipping Information:
ECCN:
PCN Information:
Description of Change: Vishay Siliconix announces that we are going to transfer foundry capacity gradually (phase by phase) to Newport UK for commercial HVM Power MOSFET parts (Gen 3) due to termination of 6-inch wafer foundry at Tower Semiconductor, Israel.Reason for Change: Due to termination of 6-inch wafer foundry at Tower Semiconductor, IsraelStart Shipment Date: Monday September 1, 2025
Part Status:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=IRFU9110PBF&field4=Vishay&field18=https://p1na.futureelectronics.com/p/discretes--transistors--mosfets/irfu9110pbf-vishay-2366177
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=IRFU9110PBF&field4=Vishay&field18=https://p1na.futureelectronics.com/p/discretes--transistors--mosfets/irfu9110pbf-vishay-2366177
Vishay IRFU9110PBF - Technical Attributes
| Fet Type: | P-Ch |
| Drain-to-Source Voltage [Vdss]: | 100V |
| Drain-Source On Resistance-Max: | 1.2Ω |
| Rated Power Dissipation: | 25|W |
| Qg Gate Charge: | 8.7nC |
| Package Style: | TO-251 (IPAK) |
| Mounting Method: | Through Hole |
Available Packaging
Package Qty:
75 per Tube
Package Style:
TO-251 (IPAK)
Mounting Method:
Through Hole