Pays de livraison
Livraison gratuite aux États-Unis continentaux à partir de 50 $ US. Des conditions s'appliquent
Pays sélectionné
Référence fabricant
IRFZ34NPBF
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50 par Tube
TO-220-3 (TO-220AB)
Through Hole
Informations de livraison:
Code HTS:
ECCN:
Informations PCN:
Subject Standardization of marking on device for dedicated PG-TO220 products Description: For old & new: - Marking on Device, Factory Code & Leadfree indicator - See the attached SPCN document for more detailsReason: Standardization to IFX marking at ATX WH, GTBF & TFME, China Intended start of delivery :2026-09-28
Detailed change information:Subject Phase out of Kyocera KEG300 mold compound for several assembly locations and change of lead finish from tin dip to electroplating at Tijuana, Mexico for dedicated TO220-3 & TO247-3 products.Reason:To ensure continuity of mold compound supply due to Kyocera KEG300 end of life and to further ensure our product performance with lead-free electroplating finish
Statut du produit:
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
Features
Advanced Process TechnologyUltra Low On-ResistanceDynamic dv/dt Rating175°C Operating TemperatureFast SwitchingEase of ParallelingLead-Free
Stock conservé dans l'entrepôt du fabricant. Sous réserve de disponibilité et de temps de transit.
