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Infineon | IRLR3636TRPBF

Manufacturer Part #

IRLR3636TRPBF

Single N-Channel 60 V 8.3 mOhm 49 nC HEXFET® Power Mosfet - TO-252-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IRLR3636TRPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 8.3mΩ
Rated Power Dissipation: 143W
Qg Gate Charge: 49nC
Gate-Source Voltage-Max [Vgss]: 16V
Drain Current: 99A
Turn-on Delay Time: 45ns
Turn-off Delay Time: 43ns
Rise Time: 216ns
Fall Time: 69ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 2.5V
Technology: Si
Height - Max: 6.73mm
Length: 2.26mm
Input Capacitance: 3779pF
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
2000
Multiple Of:
2000
Total
$1,040.00
USD
Quantity
Unit Price
2,000
$0.52
4,000
$0.515
6,000
$0.51
10,000+
$0.50
Product Variant Information section