Manufacturer Part #
MRF101AN
MRF Series 50 V 250 MHz 100 W CW Wideband RF Power LDMOS Transistor - TO220-3
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| Mfr. Name: | NXP | ||||||||||
| Standard Pkg: |
Product Variant Information section
Available PackagingPackage Qty:50 per Tube Package Style:TO-220-3 (TO-220AB) Mounting Method:Through Hole |
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Product Specification Section
NXP MRF101AN - Technical Attributes
Attributes Table
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 133V |
| Rated Power Dissipation: | 182W |
| Gate-Source Voltage-Max [Vgss]: | 10V |
| Operating Temp Range: | -40°C to +175°C |
| Gate Source Threshold: | 2.2V |
| Input Capacitance: | 149pF |
| Package Style: | TO-220-3 (TO-220AB) |
| Mounting Method: | Through Hole |
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
16 Weeks
Quantity
Unit Price
50
$26.78
100
$26.61
150+
$26.44
Product Variant Information section
Available Packaging
Package Qty:
50 per Tube
Package Style:
TO-220-3 (TO-220AB)
Mounting Method:
Through Hole