text.skipToContent text.skipToNavigation

Truck-Icon.svg Free shipping within the continental US over $50. Conditions apply

warning.svg Orders shipping outside of United States will be on hold while the company evaluates tariff impacts.
Please contact your salesperson for assistance.

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. Mosfets
  6. NTE4151PT1G

onsemi | NTE4151PT1G

Manufacturer Part #

NTE4151PT1G

Single P-Channel 20 V 1 Ohm 2.1 nC 313 mW Silicon SMT Mosfet - SC-89-3

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2503
Product Specification Section
onsemi NTE4151PT1G - Technical Attributes
Attributes Table
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: -20V
Drain-Source On Resistance-Max: 1Ω
Rated Power Dissipation: 313mW
Qg Gate Charge: 2.1nC
Gate-Source Voltage-Max [Vgss]: 6V
Drain Current: -760mA
Turn-on Delay Time: 8ns
Turn-off Delay Time: 29ns
Rise Time: 8.2ns
Fall Time: 20.4ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: -1.2V
Technology: Si
Height - Max: 0.8mm
Length: 1.7mm
Input Capacitance: 156pF
Package Style:  SC-89
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
19 Weeks
Minimum Order:
39000
Multiple Of:
3000
tariff icon
Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$939.90
USD
Quantity
Unit Price
3,000
$0.0247
12,000
$0.0241
45,000
$0.0234
90,000
$0.0231
225,000+
$0.0224
Product Variant Information section