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Manufacturer Part #

SIHB12N60E-GE3

MOSFET 600V 380MOHM@10V 12A N-CH E-SRS

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code: 2509
Product Specification Section
Vishay SIHB12N60E-GE3 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 380mΩ
Rated Power Dissipation: 147|W
Qg Gate Charge: 29nC
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Features & Applications
The SIHB12N60E-GE3 is an E Series Power MOSFET. It has an Operating temperature ranges b/w -55 °C to 150 °C and it is available in a D2PAK (TO-263) package.

Features:

  • Low Figure-of-Merit (FOM) Ron x Qg
  • Low Input Capacitance (Ciss)
  • Reduced Switching and Conduction Losses
  • Ultra Low Gate Charge (Qg)
  • Avalanche Energy Rated (UIS)
  • Superjunction Technology

Applications:

  • Server and Telecom Power Supplies
  • Switch Mode Power Supplies (SMPS)
  • Power Factor Correction Power Supplies (PFC)
  • Lighting
    • High-Intensity Discharge (HID)
    • Fluorescent Ballast Lighting
  • Industrial
    • Welding
    • Induction Heating
    • Motor Drives
    • Battery Chargers
    • Renewable Energy
    • Solar (PV Inverters)

View the List of available E-Series Power MOSFETs.

Keywords: Superjunction, CoolMos

Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
4,000
Factory Lead Time:
12 Weeks
Minimum Order:
2500
Multiple Of:
500
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$2,425.00
USD
Quantity
Unit Price
500
$1.01
1,000
$0.99
2,000
$0.975
2,500
$0.97
7,500+
$0.945
Product Variant Information section