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Manufacturer Part #
SIHB12N60E-GE3
MOSFET 600V 380MOHM@10V 12A N-CH E-SRS
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| Mfr. Name: | Vishay | ||||||||||
| Standard Pkg: |
Product Variant Information section
Available PackagingPackage Qty:500 per Tube Package Style:TO-263-3 (D2PAK) Mounting Method:Surface Mount |
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| Date Code: | 2530 | ||||||||||
Vishay SIHB12N60E-GE3 - Product Specification
Shipping Information:
HTS Code:
ECCN:
PCN Information:
Description of Change: To meet increasing demand for commercial Power MOSFET products, Vishay Siliconix announces the qualification of wafer back-grind and back-metallization (BGBM) on Super Junction Commercial Power MOSFETs at in-house Siliconix Philippines Inc. (SPI) Facility in Binan, Philippines.Reason for Change: Manufacturing Capacity Expansion
Part Status:
-
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Vishay SIHB12N60E-GE3 - Technical Attributes
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 600V |
| Drain-Source On Resistance-Max: | 380mΩ |
| Rated Power Dissipation: | 147|W |
| Qg Gate Charge: | 29nC |
| Package Style: | TO-263-3 (D2PAK) |
| Mounting Method: | Surface Mount |
Features & Applications
Features:
- Low Figure-of-Merit (FOM) Ron x Qg
- Low Input Capacitance (Ciss)
- Reduced Switching and Conduction Losses
- Ultra Low Gate Charge (Qg)
- Avalanche Energy Rated (UIS)
- Superjunction Technology
Applications:
- Server and Telecom Power Supplies
- Switch Mode Power Supplies (SMPS)
- Power Factor Correction Power Supplies (PFC)
- Lighting
- High-Intensity Discharge (HID)
- Fluorescent Ballast Lighting
- Industrial
- Welding
- Induction Heating
- Motor Drives
- Battery Chargers
- Renewable Energy
- Solar (PV Inverters)
View the List of available E-Series Power MOSFETs.
Available Packaging
Package Qty:
500 per Tube
Package Style:
TO-263-3 (D2PAK)
Mounting Method:
Surface Mount