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Manufacturer Part #
SIHG33N60E-GE3
SiHG33N60E Series ±30 V 33 A 278 W Through Hole Power Mosfet - TO-247AC
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| Mfr. Name: | Vishay | ||||||||||
| Standard Pkg: |
Product Variant Information section
Available PackagingPackage Qty:500 per Bulk Package Style:TO-247AC Mounting Method:Through Hole |
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Vishay SIHG33N60E-GE3 - Product Specification
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PCN Information:
Description of Change: To meet increasing demand for commercial Power MOSFET products, Vishay Siliconix announces the qualification of wafer back-grind and back-metallization (BGBM) on Super Junction Commercial Power MOSFETs at in-house Siliconix Philippines Inc. (SPI) Facility in Binan, Philippines.Reason for Change: Manufacturing Capacity Expansion
Part Status:
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https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=SIHG33N60E-GE3&field4=Vishay&field18=https://p1na.futureelectronics.com/p/discretes--transistors--mosfets/sihg33n60e-ge3-vishay-7061394
Vishay SIHG33N60E-GE3 - Technical Attributes
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 600V |
| Drain-Source On Resistance-Max: | 99mΩ |
| Rated Power Dissipation: | 278|W |
| Qg Gate Charge: | 100nC |
| Package Style: | TO-247AC |
| Mounting Method: | Through Hole |
Available Packaging
Package Qty:
500 per Bulk
Package Style:
TO-247AC
Mounting Method:
Through Hole