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STMicroelectronics | STP12N50M2

Manufacturer Part #

STP12N50M2

STP12N50M2: 500V 0.38 Ohm 10A N-Ch. MDmesh II Plus™ Low Qg Power Mosfet-TO-220AB

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics STP12N50M2 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 500V
Drain-Source On Resistance-Max: 380mΩ
Rated Power Dissipation: 85W
Qg Gate Charge: 15nC
Gate-Source Voltage-Max [Vgss]: 25V
Drain Current: 10A
Turn-on Delay Time: 13.5ns
Turn-off Delay Time: 8ns
Rise Time: 10.5ns
Fall Time: 34.5ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Technology: MDmesh
Input Capacitance: 560pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
14 Weeks
Minimum Order:
2000
Multiple Of:
50
Total
$1,470.00
USD
Quantity
Unit Price
50
$0.79
200
$0.77
1,000
$0.745
2,000
$0.735
6,250+
$0.71
Product Variant Information section