text.skipToContent text.skipToNavigation

warning.svgOrders shipping outside of United States will be on hold while the company evaluates tariff impacts.
Please contact your salesperson for assistance.

Truck-Icon.svgFree shipping within the continental US over $50. Conditions apply

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. Mosfets
  6. STS8DN3LLH5

STMicroelectronics | STS8DN3LLH5

Manufacturer Part #

STS8DN3LLH5

Dual Channel 30 V 10 A 19 mOhm Surface Mount Power Mosfet - SOIC-8

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics STS8DN3LLH5 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 19mΩ
Rated Power Dissipation: 2.7|W
Qg Gate Charge: 5.4nC
Package Style:  SOIC-8
Mounting Method: Surface Mount
Features & Applications

The STS8DN3LLH5 is a dual N-Channel STripFET™ V Power MOSFET.

This STripFET™V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class FOM. It is available in a SO-8 package.

Features:

  • RDS(on) * Qg industry benchmark
  • Extremely low on-resistance RDS(on)
  • Very low switching gate charge
  • High avalanche ruggedness
  • Low gate drive power losses

Applications:

  • Switching applications
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
13 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$875.00
USD
Quantity
Unit Price
2,500
$0.35
5,000
$0.345
10,000
$0.34
12,500+
$0.335
Product Variant Information section