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STMicroelectronics | STW18NM80

Manufacturer Part #

STW18NM80

Single N-Channel 800 V 190 W 70 nC Silicon Through Hole Mosfet - TO-247-3

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code: 2525
Product Specification Section
STMicroelectronics STW18NM80 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 800V
Drain-Source On Resistance-Max: 0.295Ω
Rated Power Dissipation: 190W
Qg Gate Charge: 70nC
Gate-Source Voltage-Max [Vgss]: 30V
Drain Current: 17A
Turn-on Delay Time: 18ns
Turn-off Delay Time: 96ns
Rise Time: 28ns
Fall Time: 50ns
Operating Temp Range: -65°C to +150°C
Gate Source Threshold: 5V
Technology: Si
Height - Max: 20.15mm
Length: 15.75mm
Input Capacitance: 2070pF
Package Style:  TO-247-3
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
20 Weeks
Minimum Order:
600
Multiple Of:
600
Total
$2,826.00
USD
Quantity
Unit Price
600
$4.71
1,200+
$4.64
Product Variant Information section