onsemi | 1N5818G

This series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high frequency inverters, free wheeling diodes, and polarity protection diodes.

Features:

• xtremely Low VF
• Low Stored Charge, Majority Carrier Conduction
• Low Power Loss/High Efficiency
• These are Pb-Free Devices

Mechanical Characteristics:

• Case: Epoxy, Molded
• Weight: 0.4 Gram (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
• Lead Temperature for Soldering Purposes: 260°C Max for 10 Seconds
• Polarity: Cathode Indicated by Polarity Band
• ESD Ratings: Machine Model = C (>400 V) Human Body Model = 3B (>8000 V)