onsemi | MBR20H150CTG

The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifiers state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifiers in low voltage, high frequency inverters, free wheeling diodes and polarity protection diodes.

Features:

• Low Forward Voltage
• Low Power Loss/High Efficiency
• High Surge Capability
• 20 A Total (10 A Per Diode Leg)
• Guard-Ring for Stress Protection
• These are Pb-Free Devices

Mechanical Characteristics:

• Case: Epoxy, Molded
• Epoxy Meets UL 94 V-0 @ 0.125 in
• Weight (Approximately): 1.9 Grams (TO-220 & TO-220FP)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
• Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds

Applications:

• Power Supply - Output Rectification
• Power Management
• Instrumentation