onsemi | SS24T3G

The SS24T3G devices employ the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes.

Key Features:

• Compact Package with J−Bend Leads Ideal for Automated Handling
• Highly Stable Oxide Passivated Junction
• Guardring for Over−Voltage Protection
• Low Forward Voltage Drop
• Pb−Free Packages are Available

Characteristics:

• Case: Molded Epoxy
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Weight: 95 mg (approximately)
• Cathode Polarity Band
• Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
• ESD Ratings:
  • Machine Model = C
  • Human Body Model = 3B