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Référence fabricant

STTH812DI

STTH812 Series 8 A 1.25 V 100 ns Ultrafast Recovery Diode -TO-220-2 Insulated

Modèle ECAD:
Nom du fabricant: STMicroelectronics
Emballage standard:
Product Variant Information section
Code de date:
Product Specification Section
STMicroelectronics STTH812DI - Caractéristiques techniques
Attributes Table
Average Rectified Current-Max: 8A
Peak Current-Max: 80A
Reverse Voltage-Max [Vrrm]: 1200V
Reverse Current-Max: 8µA
Forward Voltage: 2.2V
Configuration: Single
Forward RMS Current [If rms]: 20A
Diode Capacitance-Max: 7pF
Reverse Recovery Time-Max: 100ns
Thermal Resistance: 3.1°C/W
Operating Temp Range: 175°C
Storage Temperature Range: -65°C to +175°C
Style d'emballage :  TO-220-2 (TO-220AC)
Fonctionnalités et applications

The STTH812DI is a high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability.

The improved performance in low leakage current, and therefore thermal runaway guard band, is an immediate competitive advantage for this device.

Features:

  • Ultrafast, soft recovery
  • Very low conduction and switching losses
  • High frequency and/or high pulsed current operation
  • High reverse voltage capability
  • High junction temperature
  • Insulated packages:
  • TO-220Ins Electrical insulation = 2500 VRMS Capacitance = 7 pF
  • TO-220FPAC Electrical insulation = 2000 VRMS Capacitance = 12 pF
Pricing Section
Stock global :
0
États-Unis:
0
Sur commande :
0
Stock d'usine :Stock d'usine :
-1
Délai d'usine :
15 Semaines
Commande minimale :
2000
Multiples de :
50
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Des droits de douane peuvent s’appliquer en cas d’expédition vers les États-Unis. Une estimation des droits tarifaires sera dans ce cas calculée au moment du paiement.
Total 
1 050,00 $
USD
Quantité
Prix unitaire
1
$0.595
50
$0.58
150
$0.565
500
$0.55
1 500+
$0.525
Product Variant Information section