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Manufacturer Part #
2N6387G
2N Series 60 V 10 A Darlington Medium-Power Transistor - TO-220AB
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| Mfr. Name: | onsemi | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:50 per Tube Package Style:TO-220-3 (TO-220AB) Mounting Method:Flange Mount | ||||||||||
| Date Code: | |||||||||||
Product Specification Section
onsemi 2N6387G - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
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onsemi 2N6387G - Technical Attributes
Attributes Table
| Polarity: | NPN |
| Type: | Darlington |
| CE Voltage-Max: | 60V |
| Collector Current Max: | 10A |
| Power Dissipation-Tot: | 2W |
| DC Current Gain-Min: | 1000 |
| Package Style: | TO-220-3 (TO-220AB) |
| Mounting Method: | Flange Mount |
Features & Applications
The Power 8A 80 V NPN Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications.
Features:
- High DC Current Gain
- hFE=2500 (Typ) @Ic=4.0 Adc
- Collector-Emitter Sustaining Voltage - @ 100 mAdc
- Vceo(sus) = 60 Vdc (Min) - 2N6387
- Vceo (sus) = 80 Vdc (Min) - 2N6388
- Collector-Emitter Sustaining Voltage - @ 100 mAdc
- Vceo(sus) = 60 Vdc (Min) - 2N6387
- Vceo (sus) = 80 Vdc (Min) - 2N6388
- Low Collector-Emitter Saturation Voltage
- Vce(sat) = 2.0 Vdc (Max) @ Ic=5.0 Adc
- Monolithic Construction with Built-In Base-Emitter Shunt Resistors
- T0-220AB Compact Package
- Epoxy meets UL94, VO @ 1/8 inch
- ESD Ratings Machine Model C and Human Body Model 3B
- Pb-Free Packages are Available
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
16 Weeks
Quantity
Unit Price
40
$0.55
125
$0.54
300
$0.53
750
$0.52
2,000+
$0.50
Product Variant Information section
Available Packaging
Package Qty:
50 per Tube
Package Style:
TO-220-3 (TO-220AB)
Mounting Method:
Flange Mount