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  6. IGOT65R035D2AUMA1

Infineon | IGOT65R035D2AUMA1

Manufacturer Part #

IGOT65R035D2AUMA1

GaNFET, 650V, 44A, 42MOHM, N-CH, PG-DSO-20

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2512
Product Specification Section
Infineon IGOT65R035D2AUMA1 - Technical Attributes
Attributes Table
Product Status: Active
Technology: GaNFET (Gallium Nitride)
Fet Type: N-Ch
Drain Current: 44A
No of Channels: 1
Qg Gate Charge: 7.7nC
Drain-to-Source Voltage [Vdss]: 650V
Gate-Source Voltage-Max [Vgss]: 10V
Input Capacitance: 540pF
Rated Power Dissipation: 134W
Operating Temp Range: -55°C to +150°C
Package Style:  DSO-20
Mounting Method: Surface Mount
Pricing Section
Global Stock:
800
USA:
800
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
18 Weeks
Minimum Order:
800
Multiple Of:
800
Total
$4,088.00
USD
Quantity
Unit Price
800+
$5.11
Product Variant Information section