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Manufacturer Part #

APT45GP120B2DQ2G

POWER MOS 7® 7 Series 1200 V 113 A 625 W Through Hole IGBT - T-MAX™

ECAD Model:
Mfr. Name: Microchip
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Microchip APT45GP120B2DQ2G - Technical Attributes
Attributes Table
CE Voltage-Max: 1200V
Collector Current @ 25C: 113A
Power Dissipation-Tot: 625W
Gate - Emitter Voltage: ±30V
Pulsed Collector Current: 170A
Turn-on Delay Time: 18ns
Turn-off Delay Time: 100ns
Qg Gate Charge: 185nC
Reverse Recovery Time-Max: 350ns
Leakage Current: 100nA
Input Capacitance: 3995pF
Operating Temp Range: -55°C to +150°C
No of Terminals: 3
Package Style:  T-MAX
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
20 Weeks
Minimum Order:
100
Multiple Of:
1
Total
$1,936.00
USD
Quantity
Unit Price
1
$20.03
5
$19.78
25
$19.53
75
$19.36
200+
$19.08
Product Variant Information section