text.skipToContent text.skipToNavigation

Manufacturer Part #

APT75GP120B2G

APT75GP120B2G Single 1200 V 100 A 1042 W 320 nC POWER MOS 7® IGBT - TO-247-3

ECAD Model:
Mfr. Name: Microchip
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Microchip APT75GP120B2G - Technical Attributes
Attributes Table
CE Voltage-Max: 1200V
Collector Current @ 25C: 100A
Power Dissipation-Tot: 1042W
Gate - Emitter Voltage: 20V
Pulsed Collector Current: 300A
Collector - Emitter Saturation Voltage: 3.3V
Turn-on Delay Time: 20ns
Turn-off Delay Time: 163s
Qg Gate Charge: 320nC
Leakage Current: 100nA
Input Capacitance: 7035pF
Thermal Resistance: 0.12°C/W
Operating Temp Range: -55°C to +150°C
No of Terminals: 3
Package Style:  T-MAX
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
20 Weeks
Minimum Order:
25
Multiple Of:
1
Total
$606.25
USD
Quantity
Unit Price
1
$24.87
5
$24.56
25
$24.25
75
$24.05
200+
$23.69
Product Variant Information section