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  6. IKW30N65ET7XKSA1

Infineon | IKW30N65ET7XKSA1

Manufacturer Part #

IKW30N65ET7XKSA1

IKW30N65ET7 Series 650 V 30 A 188 W Through Hole IGBT Transistor - PG-TO-247-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IKW30N65ET7XKSA1 - Technical Attributes
Attributes Table
CE Voltage-Max: 650V
Collector Current @ 25C: 60A
Power Dissipation-Tot: 188W
Gate - Emitter Voltage: ±20V
Collector - Emitter Saturation Voltage: 1.35V
Turn-on Delay Time: 20ns
Turn-off Delay Time: 245ns
Qg Gate Charge: 180nC
Reverse Recovery Time-Max: 80ns
Operating Temp Range: -40°C to +175°C
No of Terminals: 2
Package Style:  TO-247-3
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
19 Weeks
Minimum Order:
240
Multiple Of:
240
Total
$372.00
USD
Quantity
Unit Price
240
$1.55
720
$1.54
1,200
$1.53
2,400
$1.52
4,800+
$1.50
Product Variant Information section