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Manufacturer Part #

NGW30T65M3DFPQ

650 V 57 A Through Hole IGBT Trench Field-Stop Silicon Diode - TO-247-3

ECAD Model:
Mfr. Name: Nexperia
Standard Pkg:
Product Variant Information section
Date Code: 2538
Product Specification Section
Nexperia NGW30T65M3DFPQ - Technical Attributes
Attributes Table
CE Voltage-Max: 650V
Collector Current @ 25C: 57A
Power Dissipation-Tot: 199W
Gate - Emitter Voltage: 20V
Pulsed Collector Current: 90A
Collector - Emitter Saturation Voltage: 1.5V
Turn-on Delay Time: 16ns
Turn-off Delay Time: 137ns
Qg Gate Charge: 89nC
Reverse Recovery Time-Max: 105ns
Leakage Current: 100nA
Input Capacitance: 2196pF
Operating Temp Range: -40°C to +175°C
No of Terminals: 3
Package Style:  TO-247-3
Mounting Method: Through Hole
Pricing Section
Global Stock:
450
USA:
450
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
450
Multiple Of:
450
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,057.50
USD
Quantity
Unit Price
450
$2.35
900
$2.33
1,350
$2.32
2,250+
$2.29
Product Variant Information section