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Manufacturer Part #

STGWT40H65FB

HB Series 650 V 80 A High Speed Trench Gate Field-Stop IGBT - TO-3P

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code: 1414
Product Specification Section
STMicroelectronics STGWT40H65FB - Technical Attributes
Attributes Table
CE Voltage-Max: 650V
Collector Current @ 25C: 80A
Power Dissipation-Tot: 283W
Gate - Emitter Voltage: 20V
Pulsed Collector Current: 160A
Collector - Emitter Saturation Voltage: 1.6V
Turn-on Delay Time: 40ns
Turn-off Delay Time: 142ns
Qg Gate Charge: 210nC
Leakage Current: 250nA
Input Capacitance: 5412pF
Thermal Resistance: 50°C/W
Operating Temp Range: -55°C to +175°C
No of Terminals: 3
Package Style:  TO-3P
Mounting Method: Through Hole
Pricing Section
Global Stock:
600
USA:
600
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
1
Multiple Of:
1
Total
$0.69
USD
Quantity
Unit Price
1
$0.685
50
$0.665
200
$0.65
750
$0.63
2,500+
$0.60
Product Variant Information section