
Manufacturer Part #
STGWT60H65FB
HB Series 650 V 80 A High Speed Trench Gate Field-Stop IGBT - TO-3P
Product Specification Section
STMicroelectronics STGWT60H65FB - Product Specification
Shipping Information:
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ECCN:
EAR99
PCN Information:
N/A
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Date
Part Status:
Active
Active
STMicroelectronics STGWT60H65FB - Technical Attributes
Attributes Table
CE Voltage-Max: | 650V |
Collector Current @ 25C: | 80A |
Power Dissipation-Tot: | 375W |
Gate - Emitter Voltage: | 20V |
Pulsed Collector Current: | 240A |
Collector - Emitter Saturation Voltage: | 1.6V |
Turn-on Delay Time: | 66ns |
Turn-off Delay Time: | 210ns |
Qg Gate Charge: | 306nC |
Leakage Current: | 250nA |
Input Capacitance: | 7792pF |
Thermal Resistance: | 50°C/W |
Operating Temp Range: | -55°C to +175°C |
No of Terminals: | 3 |
Package Style: | TO-3P |
Mounting Method: | Through Hole |
Pricing Section
Global Stock:
600
USA:
600
On Order:
0
Factory Lead Time:
15 Weeks
Quantity
Unit Price
1
$1.73
30
$1.71
125
$1.68
300
$1.66
1,250+
$1.61
Product Variant Information section
Available Packaging
Package Qty:
30 per Tube
Package Style:
TO-3P
Mounting Method:
Through Hole