Orders shipping outside of United States will be on hold while the company evaluates tariff impacts.
Please contact your salesperson for assistance.
Manufacturer Part #
STGWT80H65DFB
HB Series 650 V 120 A High Speed Trench Gate Field-Stop IGBT - TO-3P
| | |||||||||||
| | |||||||||||
| Mfr. Name: | STMicroelectronics | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:30 per Tube Package Style:TO-3P Mounting Method:Through Hole | ||||||||||
| Date Code: | |||||||||||
Product Specification Section
STMicroelectronics STGWT80H65DFB - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
STMicroelectronics STGWT80H65DFB - Technical Attributes
Attributes Table
| CE Voltage-Max: | 650V |
| Collector Current @ 25C: | 120A |
| Power Dissipation-Tot: | 469W |
| Gate - Emitter Voltage: | 20V |
| Pulsed Collector Current: | 300A |
| Collector - Emitter Saturation Voltage: | 1.6V |
| Turn-on Delay Time: | 84ns |
| Turn-off Delay Time: | 280ns |
| Qg Gate Charge: | 414nC |
| Reverse Recovery Time-Max: | 85ns |
| Leakage Current: | 250nA |
| Input Capacitance: | 10524pF |
| Thermal Resistance: | 50°C/W |
| Operating Temp Range: | -55°C to +175°C |
| No of Terminals: | 3 |
| Package Style: | TO-3P |
| Mounting Method: | Through Hole |
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
15 Weeks
Quantity
Unit Price
30
$3.56
90
$3.51
150
$3.49
600
$3.42
900+
$3.38
Product Variant Information section
Available Packaging
Package Qty:
30 per Tube
Package Style:
TO-3P
Mounting Method:
Through Hole