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Manufacturer Part #

STGWT80H65DFB

HB Series 650 V 120 A High Speed Trench Gate Field-Stop IGBT - TO-3P

Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code: 1406
Product Specification Section
Technical Attributes
Attributes Table
CE Voltage-Max: 650V
Collector Current @ 25C: 120A
Power Dissipation-Tot: 469W
Gate - Emitter Voltage: 20V
Pulsed Collector Current: 300A
Collector - Emitter Saturation Voltage: 1.6V
Turn-on Delay Time: 84ns
Turn-off Delay Time: 280ns
Qg Gate Charge: 414nC
Reverse Recovery Time-Max: 85ns
Leakage Current: 250nA
Input Capacitance: 10524pF
Thermal Resistance: 50°C/W
Operating Temp Range: -55°C to +175°C
No of Terminals: 3
Package Style:  TO-3P
Mounting Method: Through Hole
Pricing Section
Stock:
0
Minimum Order:
300
Multiple Of:
30
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
32 Weeks
Total
$1,143.00
USD
Quantity
Web Price
30
$4.56
90
$3.96
300
$3.81
600
$3.73
1,200+
$3.65
Product Variant Information section