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Infineon | BSO150N03MDGXUMA1

Manufacturer Part #

BSO150N03MDGXUMA1

Dual N-Channel 30 V 18.2 mOhm 17 nC OptiMOS™ Power Mosfet - PDSO-8

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon BSO150N03MDGXUMA1 - Technical Attributes
Attributes Table
Fet Type: Dual N-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 18.2mΩ
Rated Power Dissipation: 1.4W
Qg Gate Charge: 17nC
Gate-Source Voltage-Max [Vgss]: -20V/20V
Drain Current: 8A
Turn-on Delay Time: 7.3ns
Turn-off Delay Time: 8.7ns
Rise Time: 3.8ns
Fall Time: 4.2ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2V
Technology: Si
Height - Max: 1.75mm
Length: 5mm
Input Capacitance: 970pF
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
8 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$662.50
USD
Quantity
Unit Price
2,500
$0.265
7,500
$0.26
25,000+
$0.255
Product Variant Information section