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Infineon | BSZ0901NSIATMA1

Manufacturer Part #

BSZ0901NSIATMA1

Trans MOSFET N-CH 30V 25A 8-Pin TSDSON EP T/R

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2250
Product Specification Section
Infineon BSZ0901NSIATMA1 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 2.1mΩ
Rated Power Dissipation: 2.1W
Qg Gate Charge: 41nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 25A
Turn-on Delay Time: 5ns
Turn-off Delay Time: 27ns
Rise Time: 7.2ns
Fall Time: 4.6ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2.2V
Input Capacitance: 2600pF
Mounting Method: Surface Mount
Pricing Section
Global Stock:
5,000
USA:
5,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
52+Weeks
Minimum Order:
5000
Multiple Of:
5000
Total
$2,225.00
USD
Quantity
Unit Price
5,000
$0.445
10,000
$0.44
15,000+
$0.435
Product Variant Information section