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Diodes Incorporated | DMN2022UFDF-7

Manufacturer Part #

DMN2022UFDF-7

MOSFET 20V N-Ch Enh Mode 8Vgss 7.9A .66W

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Diodes Incorporated DMN2022UFDF-7 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 22mΩ
Rated Power Dissipation: 0.66W
Qg Gate Charge: 18nC
Gate-Source Voltage-Max [Vgss]: 8V
Drain Current: 7.9A
Turn-on Delay Time: 56ns
Turn-off Delay Time: 632ns
Rise Time: 87ns
Fall Time: 239ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 1V
Input Capacitance: 907pF
Package Style:  UDFN-6
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
84,000
Factory Lead Time:
24 Weeks
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$333.00
USD
Quantity
Unit Price
3,000
$0.111
9,000
$0.109
15,000
$0.108
30,000
$0.107
60,000+
$0.105
Product Variant Information section