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Diodes Incorporated | DMN2250UFB-7B

Manufacturer Part #

DMN2250UFB-7B

DMN2250UFB Series 20 V 1.35A N-Channel Enhancement Mode Mosfet - X1-DFN1006-3

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Diodes Incorporated DMN2250UFB-7B - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 170mΩ
Rated Power Dissipation: 0.5W
Qg Gate Charge: 3.1nC
Gate-Source Voltage-Max [Vgss]: 8V
Drain Current: 1.35A
Turn-on Delay Time: 4.3ns
Turn-off Delay Time: 59.4ns
Rise Time: 6.1ns
Fall Time: 25.4ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 1V
Input Capacitance: 94pF
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
50,000
Factory Lead Time:
24 Weeks
Minimum Order:
10000
Multiple Of:
10000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$560.00
USD
Quantity
Unit Price
10,000
$0.056
20,000
$0.0552
40,000
$0.0544
50,000
$0.0541
150,000+
$0.0525
Product Variant Information section