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Manufacturer Part #

DMN3016LSS-13

DMN3016LSS Series 30 V 10.3 A N-Channel Enhancement Mode Mosfet - SOIC-8

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Diodes Incorporated DMN3016LSS-13 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 12mΩ
Rated Power Dissipation: 1.5|W
Qg Gate Charge: 25.1nC
Package Style:  SOIC-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
17,500
Factory Stock:Factory Stock:
0
Factory Lead Time:
12 Weeks
Minimum Order:
2500
Multiple Of:
2500
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$430.00
USD
Quantity
Unit Price
2,500
$0.172
7,500
$0.169
10,000
$0.168
25,000
$0.166
37,500+
$0.163
Product Variant Information section