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Diodes Incorporated | DMN3032LE-13

Manufacturer Part #

DMN3032LE-13

N-Channel 30 V 29 mOhm Surface Mount Enhancement Mode Mosfet - SOT-223

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Product Variant Information section
Date Code: 2340
Product Specification Section
Diodes Incorporated DMN3032LE-13 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 29mΩ
Rated Power Dissipation: 1.8W
Qg Gate Charge: 11.3nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 5.6A
Turn-on Delay Time: 2.3ns
Turn-off Delay Time: 10ns
Rise Time: 3.9ns
Fall Time: 1.9ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2V
Input Capacitance: 498pF
Package Style:  SOT-223 (TO-261-4, SC-73)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
682,500
Factory Lead Time:
24 Weeks
Minimum Order:
2500
Multiple Of:
2500
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$462.50
USD
Quantity
Unit Price
2,500
$0.185
7,500
$0.181
10,000
$0.18
25,000
$0.178
37,500+
$0.175
Product Variant Information section