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Manufacturer Part #
DMNH6021SK3-13
Single N-Channel 60 V 3.7 W 20.1 nC Silicon Surface Mount Mosfet - TO-252-3
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| Mfr. Name: | Diodes Incorporated | ||||||||||
| Standard Pkg: |
Product Variant Information section
Available PackagingPackage Qty:2500 per Std. Mfr. Pkg |
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| Date Code: | |||||||||||
Product Specification Section
Diodes Incorporated DMNH6021SK3-13 - Product Specification
Shipping Information:
Item cannot ship to certain countries.
See List
Item cannot ship to following countries:
N/A
HTS Code:
N/A
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
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Diodes Incorporated DMNH6021SK3-13 - Technical Attributes
Attributes Table
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 60V |
| Drain-Source On Resistance-Max: | 18mΩ |
| Rated Power Dissipation: | 3.7W |
| Qg Gate Charge: | 20.1nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 50A |
| Turn-on Delay Time: | 4.4ns |
| Turn-off Delay Time: | 14.2ns |
| Rise Time: | 6ns |
| Fall Time: | 5.4ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 3V |
| Technology: | Si |
| Height - Max: | 2.39mm |
| Length: | 6.7mm |
| Input Capacitance: | 1143pF |
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
40 Weeks
Quantity
Unit Price
2,500
$0.626
5,000
$0.618
7,500
$0.614
10,000
$0.61
12,500+
$0.60
Product Variant Information section
Available Packaging
Package Qty:
2500 per Std. Mfr. Pkg