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Diodes Incorporated | DMP45H4D9HK3-13

Manufacturer Part #

DMP45H4D9HK3-13

MOSFET MOSFETBVDSS: 251V-500V

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Diodes Incorporated DMP45H4D9HK3-13 - Technical Attributes
Attributes Table
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 450V
Drain-Source On Resistance-Max: 4.9Ω
Rated Power Dissipation: 104W
Qg Gate Charge: 13.7nC
Gate-Source Voltage-Max [Vgss]: 30V
Drain Current: 4.7A
Turn-on Delay Time: 21ns
Turn-off Delay Time: 34ns
Rise Time: 54ns
Fall Time: 34ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4V
Input Capacitance: 564pF
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
30,000
Factory Lead Time:
12 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$812.50
USD
Quantity
Unit Price
2,500
$0.325
5,000
$0.32
10,000
$0.315
12,500+
$0.31
Product Variant Information section