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Diodes Incorporated | DMPH6050SK3-13

Manufacturer Part #

DMPH6050SK3-13

Single P-Channel 60 V 1.9 W 12 nC Silicon Surface Mount Mosfet - TO-252-3

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Product Variant Information section
Date Code: 2423
Product Specification Section
Diodes Incorporated DMPH6050SK3-13 - Technical Attributes
Attributes Table
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 70mΩ
Rated Power Dissipation: 1.9W
Qg Gate Charge: 12nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 23.6A
Turn-on Delay Time: 5.3ns
Turn-off Delay Time: 49.4ns
Rise Time: 8.6ns
Fall Time: 29.7ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 3V
Technology: Si
Height - Max: 2.39mm
Length: 6.7mm
Input Capacitance: 1377pF
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
24 Weeks
Minimum Order:
2500
Multiple Of:
2500
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$562.50
USD
Quantity
Unit Price
2,500
$0.225
10,000
$0.22
37,500+
$0.215
Product Variant Information section