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Diodes Incorporated | DMTH6010SCT

Manufacturer Part #

DMTH6010SCT

Single N-Channel 60 V 2.8 W 36.3 nC Silicon Through Hole Mosfet - TO-220-3

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Diodes Incorporated DMTH6010SCT - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 7.2mΩ
Rated Power Dissipation: 2.8W
Qg Gate Charge: 36.3nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 100A
Turn-on Delay Time: 5.7ns
Turn-off Delay Time: 16.3ns
Rise Time: 10.4ns
Fall Time: 11.2ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4V
Technology: Si
Height - Max: 9.64mm
Length: 10.7mm
Input Capacitance: 1940pF
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
5,450
Factory Lead Time:
24 Weeks
Minimum Order:
50
Multiple Of:
50
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$37.75
USD
Quantity
Unit Price
50
$0.755
250
$0.73
1,000
$0.71
2,500
$0.70
6,250+
$0.675
Product Variant Information section