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onsemi | FDA28N50

Manufacturer Part #

FDA28N50

N-Channel 500 V 0.155 Ω 105 nC Flange Mount UniFET Mosfet - TO-3PN

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
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Product Specification Section
onsemi FDA28N50 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 500V
Drain-Source On Resistance-Max: 155mΩ
Rated Power Dissipation: 310|W
Qg Gate Charge: 80nC
Package Style:  TO-3PN
Mounting Method: Flange Mount
Features & Applications

The FDA28N50 is a part of FDA28N50 Series 500 V 0.155 Ω N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology

This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features:

  • RDS(on) = 0.122 Ω ( Typ.)@ VGS = 10 V, ID = 14 A
  • Low gate charge ( Typ. 80nC)
  • Low Crss ( Typ. 42 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability
  • RoHS compliant

Applications:

  • High efficient S.M.P.S
  • Active power factor correction
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
8 Weeks
Minimum Order:
450
Multiple Of:
450
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Total
$1,170.00
USD
Quantity
Unit Price
450
$2.60
900
$2.58
1,350
$2.57
1,800
$2.56
2,250+
$2.53
Product Variant Information section