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Manufacturer Part #

FDMS3572

80V, 22A, 16.5 MOHM, NCH ULTRAFET TRENCH MOSFET

ECAD Model:
Mfr. Name: ON Semiconductor
Standard Pkg:
Product Variant Information section
Date Code: 2051
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 80V
Drain-Source On Resistance-Max: 16.5mΩ
Rated Power Dissipation: 78|W
Qg Gate Charge: 40nC
Package Style:  POWER 56-8
Mounting Method: Surface Mount
Features & Applications

The FDMS3572 is a 80 V 16.5 mΩ N-Channel UltraFET Trench Mosfet this devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters

Features:

  • Max rDS(on) = 16.5 mΩ at VGS = 10 V, ID = 8.8 A
  • Max rDS(on) = 24 mΩ at VGS = 6 V, ID = 8.4 A
  • Typ Qg = 28nC at VGS = 10 V
  • Low Miller Charge
  • Optimized efficiency at high frequencies
  • RoHS Compliant 

Applications:

  • Automation
  • Building & Home Control
  • Consumer Appliances
  • Medical Electronics/Devices
  • Military & Civil Aerospace
  • Mobile Comm Infrastructure
  • Storage & Peripherals
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
51 Weeks
Minimum Order:
3000
Multiple Of:
3000
Total
$7,050.00
USD
Quantity
Web Price
3,000+
$2.35
Product Variant Information section