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onsemi | FDMS7660

Manufacturer Part #

FDMS7660

N-Channel 30 V 2.8 mOhm Surface Mount Power Trench Mosfet - Power 56

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
onsemi FDMS7660 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 2.8mΩ
Rated Power Dissipation: 2.5|W
Qg Gate Charge: 60nC
Package Style:  POWER 56-8
Mounting Method: Surface Mount
Features & Applications

The FDMS7660 is a 30 V 2.8 mΩ N-Channel Power Trench Mosfet this device has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for low gate charge, low rDS(on, fast switching speed and body diode reverse recovery performance

Features:

  • Max rDS(on) = 2.8 mΩ at VGS = 10 V, ID = 25 A
  • Max rDS(on) = 3.5 mΩ at VGS = 4.5 V, ID = 19 A
  • Advanced Package and Silicon combination for low rDS(on) andhigh efficiency
  • MSL1 robust package design
  • 100% UIL tested
  • RoHS Compliant 

Applications:

  • Automation
  • Building & Home Control
  • Consumer Appliances
  • Medical Electronics/Devices
  • Military & Civil Aerospace
  • Mobile Comm Infrastructure
  • DC-DC Conversion
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
19 Weeks
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,680.00
USD
Quantity
Unit Price
3,000
$0.56
6,000
$0.55
9,000
$0.545
15,000+
$0.535
Product Variant Information section