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onsemi | FDMS86200

Manufacturer Part #

FDMS86200

N-Channel 150 V 35 A Shielded Gate PowerTrench Mosfet - POWER56

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2418
Product Specification Section
onsemi FDMS86200 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 150V
Drain-Source On Resistance-Max: 21mΩ
Rated Power Dissipation: 104|W
Qg Gate Charge: 26nC
Package Style:  POWER 56-8
Mounting Method: Surface Mount
Features & Applications

The FDMS86200 is a N-Channel MOSFET.

Features:

  • Max rDS(on) = 18 m? at VGS = 10 V, ID = 9.6 A
  • Max rDS(on) = 21 m? at VGS = 6 V, ID = 8.8 A
  • Advanced Package and Silicon combination for low rDS(on) and high efficiency
  • MSL1 robust package design
  • 100% UIL tested
  • RoHS Compliant

Applications:

  • DC-DC Conversion
Pricing Section
Global Stock:
45,000
USA:
45,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
11 Weeks
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$3,570.00
USD
Quantity
Unit Price
3,000
$1.19
6,000+
$1.18
Product Variant Information section