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onsemi | FDN352AP

Manufacturer Part #

FDN352AP

FDN352AP Series 30 V 1.3 A 180 mOhm Single P-Ch. PowerTrench® MOSFET-SSOT-3

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2424
Product Specification Section
onsemi FDN352AP - Technical Attributes
Attributes Table
Fet Type: P-Ch
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 180mΩ
Rated Power Dissipation: 0.5|W
Package Style:  SSOT-3
Mounting Method: Surface Mount
Features & Applications

The FDN352AP is a 30 V 180 mO  single P-Channel Logic Level MOSFET is produced using advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance

Features:

  • -2 A, -20 V. RDS(ON) = 0.08 O @ VGS = -4.5 V, RDS(ON) = 0.13 O @ VGS = -2.5 V.
  • Extended VGSS range (±12 V) for battery applications.
  • High performance trench technology for extremely low RDS(ON).
  • Enhanced power SuperSOT™-3 (SOT-23).

Applications:

  • Notebook computer
  • Power managment
  • Voltage and battery powered applications

View the complete family of P-channel mosfets

Pricing Section
Global Stock:
216,000
USA:
216,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
29 Weeks
Minimum Order:
3000
Multiple Of:
3000
Total
$330.00
USD
Quantity
Unit Price
3,000
$0.11
9,000
$0.108
15,000
$0.107
30,000
$0.106
60,000+
$0.104
Product Variant Information section