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onsemi | FDN357N

Manufacturer Part #

FDN357N

N-Channel 30 V 60 mOhm Logic Level Enhancement Mode Field Effect Transistor

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2503
Product Specification Section
onsemi FDN357N - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 60mΩ
Rated Power Dissipation: 460|mW
Qg Gate Charge: 5.9nC
Package Style:  SSOT-3
Mounting Method: Surface Mount
Features & Applications

The FDN357N is a SuperSOT™-3 N-Channel logic level enhancement mode power field effect transistors are produced using high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance.

Features:

  • 1.9 A, 30 V,   RDS(ON) = 0.090 Ω @ VGS = 4.5 V, RDS(ON) = 0.060 Ω @ VGS = 10 V.
  • Industry standard outline SOT-23 surface mount package 
  • High density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

Applications:

  • Notebook
  • Computers
  • Portable phones
  • PCMCIA cards
  • Voltage applications
  • Battery powered circuits
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
9 Weeks
Minimum Order:
6000
Multiple Of:
3000
Total
$726.00
USD
Quantity
Unit Price
3,000
$0.121
9,000
$0.119
30,000
$0.117
45,000+
$0.115
Product Variant Information section