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Manufacturer Part #

FDS8858CZ

Dual N/P-Channel 30 V 1.6 W 24/46 nC Silicon Surface Mount Mosfet - SOIC-8

Product Specification Section
Technical Attributes
Attributes Table
Fet Type: Dual N/P-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 24.3mΩ/28.8mΩ
Rated Power Dissipation: 1.6W
Qg Gate Charge: 24nC/46nC
Gate-Source Voltage-Max [Vgss]: 20V/25V
Drain Current: 7.3A/8.6A
Turn-on Delay Time: 7ns/9ns
Turn-off Delay Time: 19ns/33ns
Rise Time: 10ns/20ns
Fall Time: 10ns/29ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Technology: Si
Input Capacitance: 905pF/1675pF
Package Style:  SOIC-8
Mounting Method: Surface Mount
Features & Applications

The FDS8858CZ is a 30 V 17 mΩ Dual N & P-Channel enhancement mode power MOSFETs are produced using  advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

Features:

  • Q1: N-Channel 
    • Max rDS(on) = 17 mΩ at VGS = 10 V, ID = 8.6 A
    • Max rDS(on) = 20 mΩ at VGS = 4.5 V, ID = 7.3
  • AQ2: P-Channel
    • Max rDS(on) = 20.5 mΩ at VGS = -10 V, ID = -7.3 A
    • Max rDS(on) = 34.5 mΩ at VGS = -4.5 V, ID = -5.6 A
  • High power and handing capability 
  • Fast switching speed 

Applications:

  • Inverter
  • Synchronous Buck
Pricing Section
Stock:
2,500
Minimum Order:
2,500
Multiple Of:
2,500
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$887.50
USD
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Quantity
Web Price
2,500
$0.355
5,000
$0.34
7,500
$0.32
10,000+
$0.305