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Manufacturer Part #

HUF75639P3

N-Channel 100 V 0.025 Ohm Flange Mount UltraFET Power Mosfet - TO-220AB

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
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Product Specification Section
onsemi HUF75639P3 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 0.025Ω
Rated Power Dissipation: 200|W
Qg Gate Charge: 130nC
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Flange Mount
Features & Applications

The HUF75639P3 is a N-Channel power MOSFET and is manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance.

This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.

Features:

  • 56 A, 100 V
  • Simulation models
  • Temperature Compensated PSPICE® and SABER™ Electrical Models
  • SPICE and SABER Thermal Impedance Models
  • Peak Current vs Pulse Width Curve
  • UIS Rating CurveThese N-Channel power MOSFETs are manufactured using the innovative UltraFET® process.

Applications:

  • TBA
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
20 Weeks
Minimum Order:
800
Multiple Of:
800
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$984.00
USD
Quantity
Unit Price
800
$1.23
1,600
$1.22
2,400
$1.21
4,000+
$1.20
Product Variant Information section