Manufacturer Part #
HUF75639P3
N-Channel 100 V 0.025 Ohm Flange Mount UltraFET Power Mosfet - TO-220AB
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| Mfr. Name: | onsemi | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:800 per Tube Package Style:TO-220-3 (TO-220AB) Mounting Method:Flange Mount | ||||||||||
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onsemi HUF75639P3 - Product Specification
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onsemi HUF75639P3 - Technical Attributes
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 100V |
| Drain-Source On Resistance-Max: | 0.025Ω |
| Rated Power Dissipation: | 200|W |
| Qg Gate Charge: | 130nC |
| Package Style: | TO-220-3 (TO-220AB) |
| Mounting Method: | Flange Mount |
Features & Applications
The HUF75639P3 is a N-Channel power MOSFET and is manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance.
This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.
Features:
- 56 A, 100 V
- Simulation models
- Temperature Compensated PSPICE® and SABER™ Electrical Models
- SPICE and SABER Thermal Impedance Models
- Peak Current vs Pulse Width Curve
- UIS Rating CurveThese N-Channel power MOSFETs are manufactured using the innovative UltraFET® process.
Applications:
- TBA
Available Packaging
Package Qty:
800 per Tube
Package Style:
TO-220-3 (TO-220AB)
Mounting Method:
Flange Mount