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Infineon | IPB019N08N3GATMA1

Manufacturer Part #

IPB019N08N3GATMA1

Single N-Channel 80 V 1.9 mOhm 155 nC OptiMOS™ Power Mosfet - D2PAK-7

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2428
Product Specification Section
Infineon IPB019N08N3GATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 80V
Drain-Source On Resistance-Max: 1.9mΩ
Rated Power Dissipation: 300W
Qg Gate Charge: 155nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 180A
Turn-on Delay Time: 28ns
Turn-off Delay Time: 86ns
Rise Time: 73ns
Fall Time: 33ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 2.8V
Technology: OptiMOS
Input Capacitance: 10700pF
Package Style:  TO-263-7 (D2PAK7)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
227,000
USA:
227,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
8 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$2,280.00
USD
Quantity
Unit Price
1,000
$2.28
2,000
$2.26
3,000+
$2.25
Product Variant Information section